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你的位置:格林童话 > 黄色笑话 > www.26uuu.com 刘文杰 副教授

www.26uuu.com 刘文杰 副教授

发布日期:2024-12-05 05:00    点击次数:56

www.26uuu.com 刘文杰 副教授

 

刘文杰 LIU WENJIE 副教授

职称:副教授

所属学院:信息工程学院

导师类别:博导、硕导

科研主义:微纳光电材料与器件

关连面容:wjliu@gdut.edu.cn

博士生招生学院:信息工程学院

硕士生招生学院:信息工程学院

个东说念主简述:

刘文杰,女,副教授,广东工业大学“后生百东说念主盘算”引进东说念主才。在 ACS Nano, Applied Physics Letters,Optics Letters, Nanotechnology,Optics Express等SCI 期刊上发表论文40余篇。苦求和授权多项发明专利。主捏国度当然科学基金面上形状,国度当然科学基金、后生科学基金形状、广东省当然科学基金面上形状、中央高校形状等,当作主要洽商东说念主员参与国度当然科学基金首要洽商盘算培育形状、国度当然科学基脚上形状、广东省当然科学基金重心形状,广东省重心研发盘算等。

洽商主义聚焦于面向高速通讯规模的中枢器件—半导体高速光电探伤器、光混频器、太赫兹放射源等微纳光电芯片。

九儿 巨乳

使命资格及栽种配景:

2018.09-于今  广东工业大学 信息工程学院 副教授

2015 -2018    中山大学 光电材料与时刻国度重心施行室 副洽商员

2014-2015     国度常识产权局 专利局专利审查结合广东中心  专利审查员

2009-2014     厦门大学 微电子学与固体电子学 工学博士

2005-2009     厦门大学 物理学 理学学士

主要论文:

[1] W. J. Liu, Q. S. Zou, C. Q. Zheng, C. J. Jin*, Metal-Assisted Transfer Strategy for Construction of 2D and 3D Nanostructures on an Elastic Substrate, ACS Nano, 2019, 13(1): 440~448

[2] W. J. Liu, X. L. Hu*, Y. J. Liu*, Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate, Journal of Materials Science: Materials in Electronics, 2019, 30:3013-3018

[3] W. J. Liu, X. L. Hu, Q. S. Zou, S. Y Wu, C. J. Jin*, Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate ‘bond and peel’ method Nanotechnology, 2018, 29, 24LT01;

[4] W. J. Liu, X. L. Hu*, Y. J. Liu*, (2018). Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes. Journal of Materials Science: Materials in Electronics, 29(23), 19825-19829.

[5] W. J. Liu, S. Yang, G. H. Xiao, X. Y. She, J. F. Wang, C. J. Jin*, Mechanically tunable sub-10nm metal gap by stretching PDMS substrate , Nanotechnology, 2017.2.17, 28(7): 0~075301

[6] W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, B. P. Zhang*, "On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers", Scientific Reports, 5 (2015) 9600

[7] W. J. Liu, X. L. Hu, L. Y. Ying*, Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers, Applied Physics Letters, 2014, 104:251116. SCI,

[8] W. J. Liu, S. Q. Chen, X. L. Hu et al., Low threshold lasing of optically pumped GaN-based VCSELs with sub-nanometer roughness polishing, IEEE Photonics Technology Letters, 2013, 25:2014-2017.

[9] W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying and B. P. Zhang*. "Low-Temperature Bonding Technique for Fabrication of High-Power GaN-Based Blue Vertical Light-Emitting Diodes", Optical Materials, (2012) 34:1327-1329.

[10] X. L. Hu, F. A. Xiao, Q. B. Zhou, Y. D. Zheng , W. J. Liu,*. High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film. Journal of Alloys and Compounds. 2019, 794:137-143.

[11] Z. X. Chen, W. J. Liu,* W. Wan*, et al. "Improving the extraction efficiency of planar GaN-based blue light-emitting diodes via optimizing indium tin oxide nanodisc arrays", IEEE: Journal of Display Technology, 12 (2016) 1588-1593

[12] Z. X. Chen, W. J. Liu,* W. Wan, et al. "Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode", Journal of nanomaterials, (2016) 8202405;

[13] Q. S. Zou, W. J. Liu, Y. Shen, C. J. Jin. “Flexible plasmonic modulators induced by the thermomechanical effect”, Nanoscale, (2019) DOI:10.1039/C9NR04068D

[14] Chaoqun Zheng, Yang Shen, Mingkai Liu, W. J. Liu, Shaoying Wu, and Chongjun Jin*, Layer-by-Layer Assembly of Three-Dimensional Optical Functional Nanostructures, DOI: 10.1021/acsnano.9b00549 Publication Date (Web): April 24, 2019

[15] Wanguo Liu, Yang Shen, W. J. Liu, and Chongjun Jin* Magnetically induced Stark-like splitting and asymmetric refractive index effect in plasmonic nanostructures, Physics of Plasmas 24, 052505 (2017)

[16] L. Y. Ying, W. J. Liu, X. L. Hu, et al. "Control of Optical Loss in GaN-based Planar Cavities", Superlattices and Microstructures, 88 (2015) 561-566.

[17] X. L. Hu, W. J. Liu, G. E. Weng et al., Fabrication and Characterization of High Quality Factor GaN-based Resonant-cavity Blue Light-emitting Diodes, IEEE Photonics Technology Letters, 2012, 24:1472-1474.

[18] X. L. Hu, J. Y. Zhang, W. J. Liu, et al., Resonant-cavity Blue Light-emitting Diodes Fabricated by Two-step Substrate Transfer Technique, Electronics Letters, 2011, 47:17.

[19] X. L. Hu, J. Y. Zhang, J. Z. Shang, W. J. Liu, et al., The Exciton-longitudinal-optical-phonon Coupling in InGaN/GaN Single Quantum Well with Various Cap Layer Thicknesses, Chinese Physics B, 2010, 19:117801.

[20] L.Y. Ying, X.L. Hu, W. J. Liu, J.Y. Zhang, B.P. Zhang*, H.C. Kuo, Control of optical loss in GaN-based planar cavities, Superlattices and Microstructures, 2015,88:561

[21] Y. P. Zeng, W. J. Liu, G. E. Weng, W. R. Zhao, H. J. Zuo,J. Yu, J. Y. Zhang, L. Y. Ying, B. P. Zhang*, "Effect of In diffusion on the property of blue light-emitting diodes". Chinese Physics Letters, 32(2015)064207

[22] J. Y. Zhang, L. Y. Ying*, M. Chen, W. J. Liu, J. Yu and B. P. Zhang*, “Improved Heat Dissipation in GaN-Based Thin-Film Light-Emitting Diode with Lateral-Electrode Configuration”, Science of Advanced Materials, 7 (2015) 283-286.

[23] A. Asahara*, S. Q. Chen*, T. Ito*, M. Yoshita, W. J. Liu, B. P. Zhang, T.Suemoto and H. Akiyama, “Direct generation of 2-ps blue pulses from gain-switched InGaN VCSEL assessed by up-conversion technique”, Scientific Reports, 4 (2014) 6401.

[24] S. Q. Chen, T. Ito, A. Asahara, M. Yoshita, W. J. Liu, J. Y. Zhang B. P. Zhang*, T. Suemoto and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers”, Sciencefic Reports, 4 (2014) 4325.

[25] X. M. Cai, Y. Wang, B. H. Chen, M. M. Liang, W. J. Liu, J. Y. Zhang, X. Q. Lv, L. Y. Ying and B.P.Zhang*,"Investigation of InGaN p-i-n homojunction and heterojunction solar cells",IEEE Photonics Technology Letters, 25 (2013) 59-62.

[26] M. Chen, W. J. Liu, L. E. Cai, J. Y. Zhang, L. Sun, M. M. Liang, X. L. Hu, X. M. Cai, F. Jiang, X. Q. Lv, L. Y. Ying, Z. R. Qiu and B.P.Zhang*. "Fabrication of Vertical-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique", Electrochemical and Solid State Letters, 1(2012) Q26-Q28.

[27] J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying and B. P. Zhang*, "Performance Enhancement of GaN-based Light Emitting Diodes by Transfer from Sapphire to Silicon Substrate using Double-transfer Technique", Nanoscale Research Letters, 7 (2012) 244.

[28] X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang*, Z. R. Qiu, S. Kuboya, K. Onabe, "Well-width dependence of the emission-linewidth in ZnO/MgZnO quantum wells", Nanoscale Research Letters 7 (2012) 605.

[29] X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen and B. P. Zhang*, "Optical Properties of ZnO/MgZnO Quantum Wells with Graded Thickness" , Journal of Physics D: Applied Physics, 44 (2011) 365401.

[30] X. M. Cai, S. W. Zeng, X. Li, J. Y. Zhang, S. Lin, A. K. Ling, M. Chen, W. J. Liu, S. X. Wu and B. P. Zhang*. "Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature", IEEE Transactions on Eletron Devices, 58 (2011) 3905-3911.

科研形状:

1. 国度当然基金面上形状,62275054(2023-01至2026-12),主捏;

2. 国度当然基金面上形状,61975037(2020-01至2023-12),主捏;

3. 广东省当然科学基金面上形状,主捏;

4. 国度当然基金后生形状,61604179,主捏;

5. 中央高校科研业务费,17lgpy0,主捏

6. 广东工业大学“后生百东说念主盘算”科研开动金,主捏;

7. 国度当然科学基金首要洽商盘算培育形状,91850106,参与;

8. 国度当然科学基金面上形状,11474235,参与;

教授行动:

本科课程: 《信息论基础》